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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP50P06KDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP50P06KDG-E1-AY NP50P06KDG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 p/reel
PACKAGE TO-263 (MP-25ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
* Super low on-state resistance RDS(on)1 = 17 m MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 23 m MAX. (VGS = -4.5 V, ID = -25 A) * Low input capacitance Ciss = 5000 pF TYP. (TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
-60 m20 m50 m150 90 1.8 175 -55 to +175 32 106
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.67 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18689EJ3V0DS00 (3rd edition) Date Published May 2007 NS CP(K) Printed in Japan
2007
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NP50P06KDG
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -25 A VGS = -10 V, ID = -25 A VGS = -4.5 V, ID = -25 A VDS = -10 V, VGS = 0 V, f = 1 MHz VDD = -30 V, ID = -25 A, VGS = -10 V, RG = 0
MIN.
TYP.
MAX. -10 m100
UNIT
A
nA V S
-1.0 15
-1.6 30 13.5 15.4 5000 600 300 20 45 405 270
-2.5
Drain to Source On-state Resistance
17 23
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = -48 V, VGS = -10 V, ID = -50 A IF = -50 A, VGS = 0 V IF = -50 A, VGS = 0 V, di/dt = -100 A/s
95 10 26 0.97 50 70 1.5
V ns nC
Note Pulsed test PW 350 s, Duty Cycle 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = -20 0 V - ID VDD 50 L VDD PG. BVDSS VDS VGS(-) 0 Starting Tch = 1 s Duty Cycle 1% VDS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL RG VDD VDS(-)
90% 10% 10% 90%
VGS(-) VGS
Wave Form
0
10%
VGS
90%
IAS
VDS
0
td(on) ton
tr td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = -2 mA PG. 50 RL VDD
2
Data Sheet D18689EJ3V0DS
NP50P06KDG
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - C FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - C
-1000
ID(pulse)
-100
ID - Drain Current - A
ID(DC)
PW
=1
i
00
s
-10
RDS(on) Limited (VGS = -10 V)
DC
w Po D er
1i m
i
s
1i 0 m
i
s
-1 -0.1
TC = 25C Single Pulse
si is t io pa n d it e m Li
-0.01 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W
1000
100
Rth(ch-A) = 83.3C/Wi
10
1
Rth(ch-C) = 1.67C/Wi
0.1 Single Pulse 0.01 100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18689EJ3V0DS
3
NP50P06KDG
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-150
-1000 -100 VDS = -10 V Pulsed
ID - Drain Current - A
-100 -4.5 V
ID - Drain Current - A
VGS = -10 V
-10 -1 -0.1 -0.01
-50
Tch = -55C -25C 25C 75C 125C 150C 175C
Pulsed 0 0 -1 -2 -3
VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S
-0.001 0 -1 -2 -3 -4 -5
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
-3 -2.5 -2 -1.5 -1 -0.5 0 -75 -25 25 75 125 175 225
Tch - Channel Temperature - C
100 Tch = -55C -25C 25C 75C
10
1 VDS = -10 V Pulsed 0.1 -0.1
125C 150C 175C
VDS = -10 V ID = -1 mA
-1
-10
-100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
50 40 30 20 10 0 -1 -10 -100 -1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
30
20
ID = -50 A -25 A -10 A
VGS = -4.5 V -10 V Pulsed
10
Pulsed 0 0 -5 -10 -15 -20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D18689EJ3V0DS
NP50P06KDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
40
Ciss, Coss, Crss - Capacitance - pF
10000 Ciss 1000 Coss
30 VGS = -4.5 V 20 -10 V 10 ID = -25 A Pulsed 0 -75 -25 25 75 125 175 225
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
1000
Crss 100 VGS = 0 V f = 1 MHz 10 -0.1 -1 -10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60 -12 VDD = -48 V -30 V -12 V -10 -8 -6 VGS -4 -2 ID = -50 A 40 60 80 0 100
td(off )
100 tf td(on) 10 tr VDD = -30 V VGS = -10 V RG = 0 1 -0.1 -1 -10 -100
VDS - Drain to Source Voltage - V
-50 -40 -30 -20 -10 0 0 20
VDS
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
-100 1000
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
-10 VGS = -10 V -1 0V
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
100
10 di/dt = -100 A/s VGS = 0 V 1 -0.1 -1 -10 -100
-0.1 Pulsed -0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D18689EJ3V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
NP50P06KDG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZK)
10.00.3 No plating 7.88 MIN. 4
1.350.3
4.450.2 1.30.2
8.0 TYP.
9.150.3
15.250.5
0.025 to 0.25
0.5
0.750.2 2.54 1 2 3
0.2 8o
0 to
0.25 1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18689EJ3V0DS
2.540.25
NP50P06KDG
* The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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